tsm 2301a 20v p-channel mosfet 1/6 version: a12 sot - 2 3 product summary v ds (v) r ds(on) (m ? ) i d (a) -20 130 @ v gs =-4.5v -2.8 190 @ v gs =-2.5v -2.0 features advance trench process technology high density cell design for ultra low on-resistan ce application battery management high speed switch ordering information part no. package packing tsm2301acx rfg sot-23 3kpcs / 7 reel note: g denotes halogen free product. absolute maximum rating (t a =25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -20 v gate-source voltage v gs 12 v continuous drain current i d -2.8 a pulsed drain current i dm -10 a continuous source current (diode conduction) a,b i s -1 a maximum power dissipation t a =25 o c p d 0.7 w t a =70 o c 0.45 operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg -55 to +150 o c thermal performance parameter symbol limit unit junction to ambient thermal resistance (pcb mounted ) r ? ja 175 o c/w notes: a. pulse width limited by the maximum junction temp erature b. surface mounted on a 1 in 2 pad of 2oz cu, t 10 sec. block diagram p-channel mosfet pin definition : 1. gate 2. source 3. drain
tsm 2301a 20v p-channel mosfet 2/6 version: a12 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250a bv dss -20 -- -- v gate threshold voltage v ds = v gs , i d = 250a v gs(th) -0.6 -0.7 -1 v gate body leakage v gs = 12v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = -20v, v gs = 0v i dss -- -- 1.0 a drain-source on-state resistance v gs = -4.5v, i d = -2.8a r ds(on) -- 90 130 m ? v gs = -2.5v, i d = -2.0a -- 120 190 diode forward voltage i s = -1a, v gs = 0v v sd -- -0.7 -1.3 v dynamic b gate resistance v gs = v ds =0v, f=1mhz r g -- 7.5 -- ? total gate charge v ds = -6v, i d = -2.8a, v gs = -4.5v q g -- 7.2 -- nc gate-source charge q gs -- 2.2 -- gate-drain charge q gd -- 1.2 -- input capacitance v ds = -15v, v gs = 0v, f = 1.0mhz c iss -- 480 -- pf output capacitance c oss -- 460 -- reverse transfer capacitance c rss -- 10 -- switching b.c turn-on delay time v dd = -6v, r l = 6 ? , v gen = -4.5v, r g = 6 ? t d(on) -- 38 -- ns turn-on rise time t r -- 25 -- turn-off delay time t d(off) -- 43 -- turn-off fall time t f -- 5 -- notes: a. pulse test: pw 300s, duty cycle 2% b. for design aid only, not subject to production t esting. c. switching time is essentially independent of ope rating temperature.
tsm 2301a 20v p-channel mosfet 3/6 version: a12 electrical characteristics curve (ta = 25 o c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm 2301a 20v p-channel mosfet 4/6 version: a12 electrical characteristics curve (ta = 25 o c, unless otherwise noted) on-resistance vs. gate-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to -ambient
tsm 2301a 20v p-channel mosfet 5/6 version: a12 sot-23 mechanical drawing sot-23 dimension dim millimeters inches min max min max. a 0.95 bsc 0.037 bsc a1 1.9 bsc 0.074 bsc b 2.60 3.00 0.102 0.118 c 1.40 1.70 0.055 0.067 d 2.80 3.10 0.110 0.122 e 1.00 1.30 0.039 0.051 f 0.00 0.10 0.000 0.004 g 0.35 0.50 0.014 0.020 h 0.10 0.20 0.004 0.008 i 0.30 0.60 0.012 0.024 j 5o 10o 5o 10o
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